GAN4AP

En cours

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99 % power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state-of-the-art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

Retombées du projet

Suivi de projet - Pendant le projet : 45

Personnes engagées sur le projet

Partenaire(s) adhérents

Partenaire(s) non adhérents

UNIVERSITA DEGLI STUDI DI PALERMO

VALEO SYSTÈMES CONTRÔLE MOTEURS

WURTH ELEKTRONIK EISOS GMBH & CO KG

SEMPA SYSTEMS GMBH

SAINT-GOBAIN LUMILOG (SGL)

STMICROELECTRONICS (ITALIE)

TECHNISCHE UNIVERSITEIT EINDHOVEN

UNIVERSITA DEGLI STUDI DI CATANIA

UNIVERSITA DEGLI STUDI DI MESSINA

MECAPROM TECHNOLOGIES CORPORATION ITALIA SRL

NXP SEMICONDUCTORS

STMICROELECTRONICS DESIGN AND APPLICATION SRO - REPUBLIQUE TCHEQUE

SYNERGIE CAD INSTR.

SCHNEIDER ELECTRIC AUTOMATION GMBH

CESKE VYSOKE UCENI TECHNICKE V PRAZE

IROELEKTRONICKYCH APLIKACI S.R.O.

GFRIED WILHELM LEIBNIZ UNIVERSITAET HANNOVER

NEXTNANO GMBH

S.A.T.SICILIANA ARTICOLI TECNICI SRL

SCHNEIDER ELECTRIC

STMICROELECTRONICS (ROUSSET)

HOCHSCHULE FUR ANGEWANDTE WISSENSCHAFTEN WURZBURG-SCHWEINFURT

AUTOMATISIERUNGSTECHNIK VOIGT GMBH

FERRARI-SOCIETA' PER AZIONI ESERCIZIO FABBRICHE AUTOMOBILI E CORSE

FINEPOWER GMBH

VALEO SIEMENS EAUTOMOTIVE GERMANY GMBH

VALEO SIEMENS EAUTOMOTIVE FRANCE SAS

APSI3D

CEA INVESTISSEMENT

CNR (CONSIGLIO NAZIONALE DELLE RICERCHE)

ELDOR CORPORATION SPA

ENELX SRL

FORSCHUNGSVERBUND BERLIN EV

AIXTRON SE

CNRS PARIS

DOCKWEILER CHEMICALS GMBH

EDA INDUSTRIES SPA

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V

ALGOWATT SPA

CONSORTIA NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA (IUNET)

ADVANTEST EUROPE GMBH

Informations sur le projet

Début du projet le 01 / 06 / 2021


Domaines d'activité stratégiques

Systèmes électriques pour la mobilité

Matériaux et composants pour l'électronique


Référent du projet

Aniss HADJI
Chargé de projets européens

06 10 33 89 48

aniss.hadji-ext@st.com

Bruxelles

Ces projets pourraient vous intéresser

Retour aux projets

Consulter les appels à projets

Vous avez une idée de projet à développer ?

Découvrez les appels à projets

Je souhaite être accompagné !

Besoin d'un accompagnement pour vos projets ?

Demande d'adhésion