GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99 % power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state-of-the-art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.
Suivi de projet - Pendant le projet : 45
Partenaire(s) adhérents
Partenaire(s) non adhérents
UNIVERSITA DEGLI STUDI DI PALERMO
VALEO SYSTÈMES CONTRÔLE MOTEURS
WURTH ELEKTRONIK EISOS GMBH & CO KG
SEMPA SYSTEMS GMBH
SAINT-GOBAIN LUMILOG (SGL)
STMICROELECTRONICS (ITALIE)
TECHNISCHE UNIVERSITEIT EINDHOVEN
UNIVERSITA DEGLI STUDI DI CATANIA
UNIVERSITA DEGLI STUDI DI MESSINA
MECAPROM TECHNOLOGIES CORPORATION ITALIA SRL
NXP SEMICONDUCTORS
STMICROELECTRONICS DESIGN AND APPLICATION SRO - REPUBLIQUE TCHEQUE
SYNERGIE CAD INSTR.
SCHNEIDER ELECTRIC AUTOMATION GMBH
CESKE VYSOKE UCENI TECHNICKE V PRAZE
IROELEKTRONICKYCH APLIKACI S.R.O.
GFRIED WILHELM LEIBNIZ UNIVERSITAET HANNOVER
NEXTNANO GMBH
S.A.T.SICILIANA ARTICOLI TECNICI SRL
SCHNEIDER ELECTRIC
STMICROELECTRONICS (ROUSSET)
HOCHSCHULE FUR ANGEWANDTE WISSENSCHAFTEN WURZBURG-SCHWEINFURT
AUTOMATISIERUNGSTECHNIK VOIGT GMBH
FERRARI-SOCIETA' PER AZIONI ESERCIZIO FABBRICHE AUTOMOBILI E CORSE
FINEPOWER GMBH
VALEO SIEMENS EAUTOMOTIVE GERMANY GMBH
VALEO SIEMENS EAUTOMOTIVE FRANCE SAS
APSI3D
CEA INVESTISSEMENT
CNR (CONSIGLIO NAZIONALE DELLE RICERCHE)
ELDOR CORPORATION SPA
ENELX SRL
FORSCHUNGSVERBUND BERLIN EV
AIXTRON SE
CNRS PARIS
DOCKWEILER CHEMICALS GMBH
EDA INDUSTRIES SPA
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V
ALGOWATT SPA
CONSORTIA NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA (IUNET)
ADVANTEST EUROPE GMBH
Début du projet le 01 / 06 / 2021
Domaines d'activité stratégiques
Systèmes électriques pour la mobilité
Matériaux et composants pour l'électronique
Référent du projet
Aniss HADJI
06 10 33 89 48
aniss.hadji-ext@st.com
Bruxelles
Développement d’une borne de production et de distribution multi-énergies pour la mobilité.
Pour lutter contre le réchauffement climatique et la pollution, les véhicules H2 à pile à…
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