The Silicon Carbide with cubic structure (3C-SiC) can be deposited on Silicon substrates and opens exiting opportunities to manufacture electronic power components and MEMs. The goal of the NANOSENS project deals with the development of both the material and the associated technologies and processes to manufacture low-cost SiC Microsystems. Thanks to these developments, the project will eventually setup a technology platform dedicated to SiC microsystem manufacturing.
Rapport final : 1
Publication scientifique : 102
Thèse : 18
Rapport final : 5
Fin du projet le 11 / 09 / 2024
Domaines d'activité stratégiques
Systèmes électriques pour les mobilités
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