The Silicon Carbide with cubic structure (3C-SiC) can be deposited on Silicon substrates and opens exiting opportunities to manufacture electronic power components and MEMs. The goal of the NANOSENS project deals with the development of both the material and the associated technologies and processes to manufacture low-cost SiC Microsystems. Thanks to these developments, the project will eventually setup a technology platform dedicated to SiC microsystem manufacturing.
Rapport final : 1
Publication scientifique : 102
Thèse : 18
Rapport final : 5
No member partner
LABORATOIRE LMP TOURS
LABORATOIRE CRHEA
NOVASIC
LABORATOIRE IM2NP
LABORATOIRE LPN
Start of the project on01 / 01 / 2009 | End of project on31 / 12 / 2013
Strategic business lines
Matériaux et composants pour l'électronique
Referent of the project
07 86 53 38 74
sebastien.desplobain-s2e2-ext@st.com
Centre-Val de Loire