GAN4AP

In progress

GaN4AP project has the ambitious target of making the GaN-based electronics to become the main power active device present in all power converter systems, with the possibility of developing a close-to-zero energy loss power electronic systems. GaN4AP project will… 1. Develop innovative Power Electronic Systems for power conversion and management with advanced architecture and circuit topology based on state of the art GaN-based High Electron Mobility Transistors (HEMTs) available in a new concept high-frequency packages that can achieve the requested 99 % power conversion efficiency. 2. Develop an innovative material (Aluminium Scandium Nitride, AlScN) that combined with advanced growth and process solutions can provide outstanding physical properties for highly efficient power transistors. Therefore, a new HEMT device architecture will be fabricated with much higher current (2x) and power density (2x) than existing transistors. 3. Develop a new generation of vertical power GaN-based devices on MOSFET architecture with vertical p-GaN inversion channel for safe power switching up to 1200 V. We will cover all the production chain from the device design, processing and characterization up to tests in low inductance half bridge power modules and their implementation in high speed power switching systems. 4. Develop a new intelligent and integrated GaN solutions (STi2GaN) both in System in Package (SiP) and Monolithic variances, that will allow the generation of E-Mobility power converters. The projects will focus on scalable concept for 48V-12V bidirectional Buck Boost converters for conventional and ADAS applications combining, in a novel wire-bond free package, a state-of-the-art BCD driver & controller along with a common substrate Monolithic 100V e-GaN Half Bridge. The development of new device technologies and innovative power circuits, employing the GaN-based devices is a crucial factor for the world-wide competitiveness of EU industries.

Project benefits

Publication scientifique : 1215

Action de communication : 1080

Suivi de projet - Pendant le projet : 45

People involved in the project

Member partner

No member partner

SCHNEIDER ELECTRIC

NXP SEMICONDUCTORS

STMICROELECTRONICS (ROUSSET)

CEA INVESTISSEMENT

CNR (CONSIGLIO NAZIONALE DELLE RICERCHE)

VALEO SYSTÈMES CONTRÔLE MOTEURS

APSI3D

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V

CNRS PARIS

CONSORTIA NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA (IUNET)

ADVANTEST EUROPE GMBH

AIXTRON SE

ALGOWATT SPA

AUTOMATISIERUNGSTECHNIK VOIGT GMBH

DOCKWEILER CHEMICALS GMBH

EDA INDUSTRIES SPA

ELDOR CORPORATION SPA

ENELX SRL

FORSCHUNGSVERBUND BERLIN EV

FERRARI-SOCIETA' PER AZIONI ESERCIZIO FABBRICHE AUTOMOBILI E CORSE

HOCHSCHULE FUR ANGEWANDTE WISSENSCHAFTEN WURZBURG-SCHWEINFURT

FINEPOWER GMBH

IROELEKTRONICKYCH APLIKACI S.R.O.

GFRIED WILHELM LEIBNIZ UNIVERSITAET HANNOVER

MECAPROM TECHNOLOGIES CORPORATION ITALIA SRL

NEXTNANO GMBH

S.A.T.SICILIANA ARTICOLI TECNICI SRL

SCHNEIDER ELECTRIC AUTOMATION GMBH

SEMPA SYSTEMS GMBH

SAINT-GOBAIN LUMILOG (SGL)

STMICROELECTRONICS DESIGN AND APPLICATION SRO - REPUBLIQUE TCHEQUE

STMICROELECTRONICS (ITALIE)

SYNERGIE CAD INSTR.

TECHNISCHE UNIVERSITEIT EINDHOVEN

UNIVERSITA DEGLI STUDI DI CATANIA

UNIVERSITA DEGLI STUDI DI MESSINA

UNIVERSITA DEGLI STUDI DI PALERMO

CESKE VYSOKE UCENI TECHNICKE V PRAZE

VALEO SIEMENS EAUTOMOTIVE GERMANY GMBH

VALEO SIEMENS EAUTOMOTIVE FRANCE SAS

WURTH ELEKTRONIK EISOS GMBH & CO KG

Information of the project

Start of the project on01 / 06 / 2021


Strategic business lines

Systèmes électriques pour la mobilité

Matériaux et composants pour l'électronique


Referent of the project

Nicolas PERDRIAUX
Chargé de projets européens

06 10 33 89 48

nicolas.perdriaux-s2e2-ext@st.com

Bruxelles