Research and development in the field of "green" renewable energies is one of the most important objectives for the future of humanity. Improving the efficiency of the energy chain requires an improvement in the efficiency of each constituent part. The transport sector consumes 25% of the world's energy and uses more than half of the world's oil. Therefore, research activities related to the use of alternative energies for land transport (hybrid and electric vehicles for example) are of major importance. Research activities in power electronics fully respond to these future changes: there are many applications (electric traction, power distribution network management, home automation, transport, portable systems, ...) using a wide variety of power components. The drastic improvement in the performance of these components, in terms of energy savings, cost, size, weight and reliability, is a key factor for saving energy. It is in this context that the "SUPER SWITCH" research project proposed here is located. The main objective of this project is to propose an alternative to the IGBT used in power converters in the range of voltages 600-1200 V. These power converters are used in particular in the electric transport (rail transport, hybrid vehicles and electric, ...). Today, up to 600 V, the main competitor of the IGBT is the MOSFET. Indeed, the MOSFET has interesting properties (speed, high input impedance, thermal stability, internal freewheeling diode) for power applications but, in the 600-1200 V range, it is limited by its resistance to high ON state and, consequently, its significant ON voltage drop, which implies higher losses than the bipolar components: finding the best compromise between on-state resistance and voltage withstand is a major challenge for unipolar power switches. It is for this reason that several innovative structures have recently been proposed to exceed the theoretical limit of the compromise "on-state resistance / voltage withstand" of conventional unipolar power components. The best of these structures is the SuperJunction MOS transistor marketed by Infineon (COOLMOS ™) then STMicroelectronics (MDMESH ™); these components are manufactured using a multi-epitaxy process which is an expensive process. In this project, we propose new ways for the realization of SuperJunction components in the range 600-1200 V, using a mono-epitaxy process: the realization of very powerful and low-cost power switches, in comparison with the processes of Infineon and STMicroelectronics, will then be possible if the project is a success. Based on the complementary skills of LAAS-CNRS, LMP, IMS and IBS, this project will allow the fabrication of diodes (DT-SJDiodes) and MOSFETs (DT-SJMOSFETs) with SuperJunction with deep trenches. , including an original ending, the "Deep Trench Termination" (DT2). The performances of these components being sensitive to the balance of the loads, several critical stages of the process will be studied and developed: deep engraving with perfect verticality of the trenches, doping along the trenches and filling of these with a dielectric capable of filling trenches deep and wide or thin. The influence of these steps on electrical and thermal performance will also be studied. The "process" simulations will make it possible to define the optimal manufacturing process for these components. Finally, DT-SJDiodes, DT-SJMOSFETs and DT2 will be manufactured and characterized in terms of performance (electrical, thermal) and robustness.

Retombées du projet

Emplois crées : 3

Thèse : 8

Publication scientifique : 40

Rapport final : 4

Emplois crées : 9

Personnes engagées sur le projet
Informations sur le projet

Fin du projet le 17 / 06 / 2024

Domaines d'activité stratégiques

Électronique : matériaux, composants et sous-systèmes

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