YESvGaN will establish a new class of vertical GaN power transistors which combines the performance benefits of vertical Wide Band Gap (WBG) transistors with the cost advantages of established silicon technology. These transistors can replace IGBTs and thus reduce power conversion losses in many price-sensitive applications ranging from power supplies in data centers to traction inverters for electric vehicles. YESvGaN covers the development of the required new technology all the way from wafer to application.
Action de communication : 391
Publication scientifique : 230
Produit / Prototype : 23
Member partner
No member partner
ION BEAM SERVICES (IBS)
SOITEC
FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V
AIXTRON SE
FINEPOWER GMBH
FERDINAND-BRAUN-INSTITUT
EV GROUP E.THALLNER GMBH
HEXAGEM AB
LINKÖPING UNIVERSITY
X-FAB DRESDEN GMBH & CO. KG
X-FAB GLOBAL SERVICES GMBH
SMART INDUCTION CONVERTER TECHNOLOGY S.L.
UNIVERSITAT DE VALENCIA
NANOWIRED GMBH
GHENT UNIVERSITY
MATERIALS CENTER LEOBEN FORSCHUNG GMBH
SILTRONIC
AUREL
IUNET
RAWPOWER SRL
Start of the project on26 / 04 / 2024
Strategic business lines
Électronique : matériaux, composants et sous-systèmes
Referent of the project
Nicolas PERDRIAUX
06 10 33 89 48
nicolas.perdriaux@s2e2.fr
Bruxelles
