YESVGAN

In progress

YESvGaN will establish a new class of vertical GaN power transistors which combines the performance benefits of vertical Wide Band Gap (WBG) transistors with the cost advantages of established silicon technology. These transistors can replace IGBTs and thus reduce power conversion losses in many price-sensitive applications ranging from power supplies in data centers to traction inverters for electric vehicles. YESvGaN covers the development of the required new technology all the way from wafer to application.

Project benefits

Action de communication : 14

Action de communication : 377

Publication scientifique : 230

Produit / Prototype : 23

People involved in the project

Member partner

No member partner

ION BEAM SERVICES (IBS)

SOITEC

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V

AIXTRON SE

FINEPOWER GMBH

FERDINAND-BRAUN-INSTITUT

EV GROUP E.THALLNER GMBH

HEXAGEM AB

LINKÖPING UNIVERSITY

X-FAB DRESDEN GMBH & CO. KG

X-FAB GLOBAL SERVICES GMBH

SMART INDUCTION CONVERTER TECHNOLOGY S.L.

UNIVERSITAT DE VALENCIA

NANOWIRED GMBH

GHENT UNIVERSITY

MATERIALS CENTER LEOBEN FORSCHUNG GMBH

SILTRONIC

AUREL

IUNET

RAWPOWER SRL

Information of the project

Start of the project on01 / 05 / 2021


Strategic business lines

Matériaux et composants pour l'électronique


Referent of the project

Nicolas PERDRIAUX
Chargé de projets européens

06 10 33 89 48

nicolas.perdriaux-s2e2-ext@st.com

Bruxelles