YESVGAN

In progress

YESvGaN will establish a new class of vertical GaN power transistors which combines the performance benefits of vertical Wide Band Gap (WBG) transistors with the cost advantages of established silicon technology. These transistors can replace IGBTs and thus reduce power conversion losses in many price-sensitive applications ranging from power supplies in data centers to traction inverters for electric vehicles. YESvGaN covers the development of the required new technology all the way from wafer to application.

Project benefits

There are no benefits for this project at this time

People involved in the project

Member partner

No member partner

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V

HEXAGEM AB

X-FAB DRESDEN GMBH & CO. KG

ION BEAM SERVICES (IBS)

AUREL

IUNET

RAWPOWER SRL

SOITEC

FINEPOWER GMBH

EV GROUP E.THALLNER GMBH

GHENT UNIVERSITY

LINKÖPING UNIVERSITY

UNIVERSITAT DE VALENCIA

AIXTRON SE

FERDINAND-BRAUN-INSTITUT

X-FAB GLOBAL SERVICES GMBH

SMART INDUCTION CONVERTER TECHNOLOGY S.L.

NANOWIRED GMBH

MATERIALS CENTER LEOBEN FORSCHUNG GMBH

SILTRONIC

Information of the project

Start of the project on01 / 05 / 2021


Strategic business lines

Matériaux et composants pour l'électronique


Referent of the project

Nicolas PE