The objective of this project is to achieve high surface area silicon nanostructures for next generations of active and passive components with high integration density. The proposed route for the realization of nanostructures is to use masks based on inexpensive homopolymer mixtures and to transfer nanopatterns to silicon by plasma cryogravure.
Thèse : 1
Publication scientifique : 27
Procédé : 6
Rapport final : 3
Emplois crées : 6
Thèse : 2
Project leader
Member partner
Start of the project on22 / 09 / 2014 | End of project on01 / 09 / 2017
Strategic business lines
Matériaux et composants pour l'électronique
Referent of the project
07 86 53 38 70
nicolas.pousset-s2e2-ext@st.com
Centre-Val de loire
