GANPIN

In progress

The main objective of this project is the production of Gallium Nitride-based PIN (Positive Instrinsic Negative) diodes for high-frequency applications on silicon substates. The applications of this type of diode are reconfigurable high-frequency circuits, that is circuits that can modify one of their characteristics dynamically.

Project benefits

Emplois crées : 1

Thèse : 2

Action de communication : 2

Emplois crées : 1

People involved in the project

Project leader

Member partner

Information of the project

Start of the project on17 / 06 / 2024


Strategic business lines

Électronique : matériaux, composants et sous-systèmes


Referent of the project

Florentin BORÉ
Chargé de projets innovants

06 66 39 55 43

florentin.bore@s2e2.fr

Centre-Val de Loire