The main objective of this project is the production of Gallium Nitride-based PIN (Positive Instrinsic Negative) diodes for high-frequency applications on silicon substates. The applications of this type of diode are reconfigurable high-frequency circuits, that is circuits that can modify one of their characteristics dynamically.
Emplois crées : 1
Thèse : 2
Emplois crées : 1
Project leader
Member partner
Start of the project on01 / 10 / 2021
Strategic business lines
Matériaux et composants pour l'électronique
Referent of the project
Florentin BORÉ
06 66 39 55 43
florentin.bore-ext@st.com
Centre-Val de Loire
