The main objective of this project is the production of Gallium Nitride-based PIN (Positive Instrinsic Negative) diodes for high-frequency applications on silicon substates. The applications of this type of diode are reconfigurable high-frequency circuits, that is circuits that can modify one of their characteristics dynamically.
Emplois crées : 1
Thèse : 2
Action de communication : 2
Emplois crées : 1
Project leader
Member partner
Start of the project on19 / 04 / 2024
Strategic business lines
Électronique : matériaux, composants et sous-systèmes
Referent of the project
Florentin BORÉ
06 66 39 55 43
florentin.bore@s2e2.fr
Centre-Val de Loire
