NANOSENS

Completed

The Silicon Carbide with cubic structure (3C-SiC) can be deposited on Silicon substrates and opens exiting opportunities to manufacture electronic power components and MEMs. The goal of the NANOSENS project deals with the development of both the material and the associated technologies and processes to manufacture low-cost SiC Microsystems. Thanks to these developments, the project will eventually setup a technology platform dedicated to SiC microsystem manufacturing.

Project benefits

Rapport final : 1

Publication scientifique : 102

Thèse : 18

Rapport final : 5

People involved in the project

Member partner

No member partner

Laboratoire IM2NP

Laboratoire LPN

NOVASIC

Laboratoire CRHEA

Information of the project

Start of the project on01 / 01 / 2009 | End of project on31 / 12 / 2013


Strategic business lines

Matériaux et composants pour l'électronique


Referent of the project

Nicolas POUSSET
Directeur Technique

07 86 53 38 70

nicolas.pousset-s2e2-ext@st.com

Centre val de loire