The objective of this project is to identify new dielectric materials and to develop the associated deposition processes for the realization of very high quality capacity. These materials must have low dielectric losses and replace more traditional materials such as silicon oxide. These capacitors are intended to be integrated into filters (high-pass, low-pass, etc.) for the needs of 5G and IoT (IPD, Integrated Passive Devices). The deposition technique explored during this project is ALD (Atomic Layer Deposition). This method makes it possible to control the nature of the deposit on an atomic scale. A complete study of the electrodes, dielectric and associated interfaces can be carried out to optimize the characteristics of the capacitors.
Emplois crées : 1
Emplois crées : 1
Strategic business lines
Matériaux et composants pour l'électronique
Referent of the project
07 86 53 38 74
sebastien.desplobain-s2e2-ext@st.com
Centre-Val de Loire